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PDF APT60GU30S Data sheet ( Hoja de datos )
| Número de pieza | APT60GU30S | |
| Descripción | (APT60GU30B / APT60GU30S) POWER MOS 7 IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
APT60GAPUT603GU030BB_S
APT60GU30S
300V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• SSOA rated
G
CE
• Low Gate Charge
• Ultrafast Tail Current shutoff
TO-247
D3PAK
C
GE
G
C
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT60GU30B_S
UNIT
VCES Collector-Emitter Voltage
VGE Gate-Emitter Voltage
VGEM Gate-Emitter Voltage Transient
IC1 Continuous Collector Current @ 7 TC = 25°C
IC2 Continuous Collector Current @ TC = 100°C
ICM Pulsed Collector Current 1 @ TC = 150°C
SSOA Switching Safe Operating Area @ TJ = 150°C
PD Total Power Dissipation
www.DataTSJ,hTeSeTtG4U.coOmperating and Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
±20
±30
100
60
200
200A @ 300V
417
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 30A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
300
3 4.5 6
Volts
1.5 2.0
1.5
250
2500
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
1 page  
TYPICAL PERFORMANCE CURVES
5,000
Cies
1,000
500
Coes
100
50
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT60GU30B_S
250
200
150
100
50
0
0 50 100 150 200 250 300 350
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Junction
temp. ( C)
www.DataSheet4U.com
Power
(watts)
RC MODEL
0.0218
0.119
0.00450F
0.0119F
Case temperature
0.160
0.121F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
400
100
Fmax = min(fmax1, fmax 2 )
50
f max 1
=
t d (on )
+
0.05
t r + t d(off )
+
tf
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 200V
RG = 5 Ω
10 10 20 30
40 50
60 70
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
Pdiss
=
TJ − TC
R θJC
80 90
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT60GU30S.PDF ] | |
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