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PDF G40N60C3 Data sheet ( Hoja de datos )
| Número de pieza | G40N60C3 | |
| Descripción | HGTG40N60C3 | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTG40N60C3
December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Formerly developmental type TA49273.
Ordering Information
PART NUMBER
PACKAGE
PKG. NO.
HGTG40N60C3
TO-247
G40N60C3
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 75A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 100ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
G
www.DataSheet4U.com
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
1 page  
HGTG40N60C3
Typical Performance Curves Unless Otherwise Specified (Continued)
400
RG = 3Ω, L = 1mH, VCE = 480V
350
300
TJ = 150oC, VGE = 10V, VGE = 15V
250
200
150
100
0
TJ = 25oC, VGE = 10V, VGE = 15V
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
160
RG = 3Ω, L = 1mH, VCE = 480V
140
TJ = 150oC, VGE = 10V, VGE = 15V
120
100
80
60
TJ = 25oC, VGE = 10V OR 15V
40
20
0 10 20 30 40 50 60 70 80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
300
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
250
200
TC = 150oC
150
100
50 TC = -55oC
TC = 25oC
0
4 5 6 7 8 9 10
www.DataSheet4U.com VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
11
16
IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
14
12
10
VCE = 600V
8
6
VCE = 200V
VCE = 400V
4
2
0
0 50 100 150 200 250
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
300
15.0
12.5
CIES
FREQUENCY = 1MHz
10.0
7.5
COES
5.0
2.5
0
0
CRES
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G40N60C3.PDF ] | |
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