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PDF FGAF40N60UFD Data sheet ( Hoja de datos )
| Número de pieza | FGAF40N60UFD | |
| Descripción | Ultrafast IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGAF40N60UFD
Ultrafast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
TO-3PF
GC E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
www.DataSheet4UI.Ccom
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGAF40N60UFD
600
± 20
40
20
160
15
160
100
40
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
1.2
2.6
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
1 page  
3000
1000
Eon
100 Eoff
Eoff
10
10
Common Emitter
V = 300V, V = ± 15V
CC GE
R
G
=
10Ω
T = 25℃
C
T = 125℃
C
15 20 25 30 35 40
Collector Current , Ic (A)
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R =15 Ω
L
12 (Tc=25 ℃)
9
6
300V
200V
Vcc=100V
3
0
0 30 60 90 120
Gate Charge, Qg (nC)
Fig 14. Gate Charge Characteristics
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
10
50µs
100µs
1ms
DC Operation
1 Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
1 10
100
Collector - Emitter Voltage, V [V]
CE
www.DataSheet4U.comFig 15. SOA Characteristics
1000
500
100
10
1
0.1
1
Safe Operating Area
V =20V, T =100oC
GE C
10 100
Collector-Emitter Voltage, V [V]
CE
1000
Fig 16. Turn-Off SOA Characteristics
1
0 .5
0 .2
0 .1
0 .1
0 .0 5
0 .0 2
0 .0 1
0 .0 1
single pulse
1E-5
1E-4
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
0 .0 1
0 .1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
1
10
©2004 Fairchild Semiconductor Corporation
FGAF40N60UFD Rev. A
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGAF40N60UFD.PDF ] | |
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