(PDF) A733LT1 Datasheet

Número de pieza	A733LT1
Descripción	TRANSISTOR
Fabricantes	Jiangsu Changjiang Electronics
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733LT1 FEATURES TRANSISTOR PNP SOT 23 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.2 W Tamb=25 Collector current ICM : -0.15 Collector-base voltage A V(BR)CBO : -60 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise Unit : mm specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -5 A IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -50 V Emitter-base breakdown voltage www.DCatoalSlehceteot4rUc.ucot-moff current V(BR)EBO ICBO IE= -50 A IC=0 VCB= -60 V , IE=0 -5 V -0.1 A Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 A DC current gain HFE 1 VCE= -6 V, IC= -1m A 120 475 Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=- 10m A -0.18 -0.3 V Transition frequency VCE= -6 V, IC=-10mA fT f = 30MHz 50 MHz CLASSIFICATION OF HFE(1) Rank Range L 120-200 H 200-475 MARKING CS 1 page

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PDF A733LT1 Data sheet ( Hoja de datos )