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Datasheet EIB1415-0.3P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | EIB1415-0.3P | Internally Matched Power FET EIB1415-0.3P
UPDATED 8/31/2006
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
0.080
MIN
Excelics EIB1415-0.3P
0.080
MIN DRAIN
0.020 0.250
FEATURES
• • • • • • 14.0– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +26.0 dBm Output Power at 1dB Compression 8.0 dB | Excelics Semiconductor | data |
EIB Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | EIB-TP-UART-IC | TP-UART-IC TECHNICAL DATA
EIB-TP-UART-IC
Features
VB Tx0 Rx IN MODE 0 MODE 1 TEST MODE X1 X2 TSTOUT RxD 11 12 13 14 15 16 17 18 19 20 10 9 8 7 6 5 4 3 2 1 VB + VSP CSA VCC DIV
• Signaling for standard UART (LSB-First, Idle is 1) • Baud rate 9600 or 19200 baud for the communication: TP - UART <--> Host - Siemens Semiconductor data | | |
2 | EIB1011-2P | Internally Matched Power FET Excelics
• • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE P Excelics Semiconductor data | | |
3 | EIB1011-4P | Internally Matched Power FET Excelics
• • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKA Excelics Semiconductor data | | |
4 | EIB1011-4P | 10.7-11.7GHz 4W Internally Matched Power FET Excelics
• • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(49dBm TYPICAL) +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKA Excelics Semiconductor data | | |
5 | EIB1213-2P | Internally Matched Power FET EIB1213-2P
UPDATED 06/14/06
12.75-13.25GHz 2W Internally Matched Power FET
FEATURES
• • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 Excelics Semiconductor data | | |
6 | EIB1213-4P | Internally Matched Power FET EIB1213-4P
UPDATED 06/14/06
12.75-13.25GHz 4W Internally Matched Power FET
FEATURES
• • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 Excelics Semiconductor data | | |
7 | EIB1314-2P | Internally Matched Power FET Excelics
• • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE Excelics Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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