F3HNK90Z Datasheet PDF - STMicroelectronics
Part Number | F3HNK90Z | |
Description | STF3HNK90Z | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and F3HNK90Z download ( pdf file ) link at the bottom of this page. Total 15 Pages |
Preview 1 page No Preview Available ! STP3HNK90Z
STF3HNK90Z
N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP3HNK90Z
STP3HNK90Z
VDSS
(@Tjmax)
900 V
900 V
RDS(on)
< 0.42 Ω
< 0.42 Ω
ID
3A
3A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
www.DataSheet4U.com
Applications
■ Switching application
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STP3HNK90Z
STF3HNK90Z
Marking
P3HNK90Z
F3HNK90Z
Package
TO-220
TO-220FP
Packaging
Tube
Tube
August 2006
Rev 3
1/15
www.st.com
15
|
|
STP3HNK90Z - STF3HNK90Z
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 30V
Gate threshold voltage
VDS = VGS, ID = 50µA
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
Min. Typ. Max. Unit
900 V
1 µA
50 µA
±10 µA
3 3.75 4.5
V
3.5 4.2 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15V, ID = 1.5A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
19
690
71
14.4
S
pF
pF
pF
Cosseq(2).
Equivalent output
capacitance
VGS=0, VDS =0V to 720V
88
pF
www.DataSheet4U.com
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=450 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
23 ns
28 ns
42 ns
27 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=720V, ID = 3A
VGS =10V
26 35
5.7
13.9
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/15
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for F3HNK90Z electronic component. |
Information | Total 15 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. - ST ( PDF ) [ Learn More ] | |
Download | [ F3HNK90Z.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
F3HNK90Z | The function is STF3HNK90Z. STMicroelectronics | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
F3HN
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |