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What is F3HNK90Z?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as " STF3HNK90Z".


F3HNK90Z Datasheet PDF - STMicroelectronics

Part Number F3HNK90Z
Description STF3HNK90Z
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STP3HNK90Z
STF3HNK90Z
N-channel 900V - 0.35- 3A - TO-220 - TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP3HNK90Z
STP3HNK90Z
VDSS
(@Tjmax)
900 V
900 V
RDS(on)
< 0.42
< 0.42
ID
3A
3A
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
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Applications
Switching application
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STP3HNK90Z
STF3HNK90Z
Marking
P3HNK90Z
F3HNK90Z
Package
TO-220
TO-220FP
Packaging
Tube
Tube
August 2006
Rev 3
1/15
www.st.com
15

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F3HNK90Z equivalent
STP3HNK90Z - STF3HNK90Z
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 30V
Gate threshold voltage
VDS = VGS, ID = 50µA
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
Min. Typ. Max. Unit
900 V
1 µA
50 µA
±10 µA
3 3.75 4.5
V
3.5 4.2
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15V, ID = 1.5A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
19
690
71
14.4
S
pF
pF
pF
Cosseq(2).
Equivalent output
capacitance
VGS=0, VDS =0V to 720V
88
pF
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td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=450 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
23 ns
28 ns
42 ns
27 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=720V, ID = 3A
VGS =10V
26 35
5.7
13.9
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/15


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