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PDF AMIS-720649 Data sheet ( Hoja de datos )
| Número de pieza | AMIS-720649 | |
| Descripción | Image Sensor | |
| Fabricantes | AMI SEMICONDUCTOR | |
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AMIS-720649: Contact Image Sensor
Data Sheet
1.0 General Description
AMI Semiconductor’s AMIS-720649 (PI6049A) contact image sensor (CIS) is a 600 dots per inch (dpi) resolution linear image sensor,
which employs AMI Semiconductor’s proprietary CMOS image sensing technology. The sensor contains an on-chip output amplifier,
power down circuitry and parallel transfer features that are uniquely combined with present-day active-pixel-sensor technology. The
image sensors are designed to be cascaded end-to-end on a printed circuit board (PCB) and packaged in an image sensing module.
Applications for the sensor array include facsimiles, PC scanners, check readers, and office automation equipment.
Figure 1 is a block diagram of the sensor. Each sensor consists of 344 active pixels, their associated multiplexing switches, buffers and
an output amplifier circuit with a power-down feature. The detector’s element-to-element spacing is approximately 42.3µm. The size of
each sensor without the scribe lines is 14560µm by 380µm.
2.0 Block Diagram
42.3µm
14560µm
1 2 3 4 Row of 344 Pixels
and Video Line
Multiplexer
341 342 343 344
Parallel Transfer, Storage Cells and Readout Registers
380µm
www.DataSheet4U.com
GBST
SI
Amplifier, Power-
Down and Offset
Control
SIC CLK AVDD DVDD AVSS DVSS VOUT OR OS VR SO
Figure 1: Sensor Block Diagram
AMI Semiconductor – Dec. 05, M-20488-001
www.amis.com
1
1 page  
AMIS-720649: Contact Image Sensor
5.3 Wafer Scribe Line
Figure 3 outlines the scribe line dimensions surrounding the sensor die on a wafer.
60µm
15µm
380µm
55µm
60µm
14560µm
55µm
Data Sheet
Figure 3: Wafer Scribe Line
ww6w..0DaEtaSlehecett4rUo.c-oOm ptical Specifications
Table 2 lists the electro-optical specifications of the AMIS-720649 sensor at 25°C and Vdd = 5.0V.
Table 2: Electro-Optical Specifications
Parameter
Number of pixels
Symbol
Pixel-to-pixel spacing
Sensitivity (1)
Saturation voltage (2)
Photo-response non-uniformity (3)
Adjacent photo-response non-uniformity (4)
Dark output voltage level (5)
Dark output non-uniformity (6)
Random thermal noise (rms) (7)
Sensor-to-sensor photo-response non-uniformity (8)
Photo response linearity (9)
Sv
Vsat
Up
Upn
Vd
Ud
Vno
Usensor
PRL
Notes for Table 2 are listed on the next page under “Definitions of Electro-Optical Specifications”.
Min.
344
42.3
Typical
665
2.0
0.7
4
Max.
344
42.3
7.5
7.5
100
7.5
2.0
Units
µm
V / µJ / cm2
V
%
%
V
mV
mV
%
%
AMI Semiconductor – Dec. 05, M-20488-001
www.amis.com
5
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