NP80N03NDE Datasheet PDF - NEC
| Part Number | NP80N03NDE | |
| Description | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
| Manufacturers | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03EDE, NP80N03KDE
NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP80N03EDE-E1-AY Note1, 2
NP80N03EDE-E2-AY Note1, 2
NP80N03KDE-E1-AY Note1
NP80N03KDE-E2-AY Note1
NP80N03CDE-S12-AZ Note1, 2
NP80N03DDE-S12-AY Note1, 2
NP80N03MDE-S18-AY Note1
NP80N03NDE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel Temperature 175 degree rated
• Super Low on-state Resistance
www.DataSheet4U.com
RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
• Low input capacitance
Ciss = 2600 pF TYP.
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15310EJ3V0DS00 (3rd edition)
Date Published October 2007 NS
2001, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:"
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NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
100
10 TA = −50°C
25°C
75°C
150°C
1 175°C
0.1
1
2 34 5
VGS - Gate to Source Voltage - V
6
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = 10 V
Pulsed
10
TA = 175°C
75°C
1
25°C
−50°C
0.1
0.01
0.01
0.1 1
10
ID - Drain Current - A
100
www.DataSheet4U.com
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30 Pulsed
20
VGS = 4.5 V
5V
10 10 V
0
1 10 100 1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
Pulsed
350
300
VGS = 10 V
250
200 5 V
150
100 4.5 V
50
0
0 1.0 2.0 3.0 4.0
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10 ID = 40 A
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50 0 50 100 150
Tch - Channel Temperature - °C
Data Sheet D15310EJ3V0DS
5
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| Information | Total 10 Pages | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| NP80N03NDE | The function is MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET. | NEC |
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