FFH30US30DN Datasheet PDF - Fairchild Semiconductor
| Part Number | FFH30US30DN | |
| Description | 300V Stealth Diode | |
| Manufacturers | Fairchild Semiconductor | |
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June 2003
FFH30US30DN
30A, 300V Stealth™ Diode
General Description
The FFH30US30DN is a Stealth™ diode optimized for low
loss performance in output rectification. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)), low VF and
soft recovery under typical operating conditions.
This device is intended for use as an output rectification diode
in Telecom power supplies and other power switching
applications. Lower VF and IRM(REC) reduces diode losses.
Formerly developmental type TA49449.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 0.45
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 50ns
• High Operating Temperature . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
• Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ
Applications
• Switch Mode Power Supplies
• Power Factor Correction
• Uninterruptable Power Supplies
• Motor Drives
• Welders
Package
JEDEC STYLE 3 LEAD TO-247
ANODE 2
CATHODE
ANODE 1
Symbol
K
www.DataSheet4U.com
CATHODE
(BOTTOM SIDE
METAL)
A1 A2
Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 160oC)
Total Device Current (Both Legs)
300 V
300 V
300 V
30 A
60 A
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
70
325
230
20
-55 to 175
300
260
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
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Typical Performance Curves (per leg) (Continued)
DUTY CYCLE - DESCENDING ORDER
0.5
1.0 0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.01
10-5
SINGLE PULSE
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
Test Circuit and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
VGE
t1
t2
DUT CURRENT
RG SENSE
+
MOSFET
VDD
-
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Figure 13. trr Test Circuit
IF
0
dIF
dt
trr
ta tb
0.25 IRM
IRM
Figure 14. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
Q1
DUT
R
+
VDD
VDD
-
Figure 15. Avalanche Energy Test Circuit
©2003 Fairchild Semiconductor Corporation
VAVL
IL
IV
IL
t0 t1 t2
t
Figure 16. Avalanche Current and Voltage
Waveforms
FFH30US30DN Rev. A1
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Featured Datasheets
| Part Number | Description | Manufacturers |
| FFH30US30DN | The function is 300V Stealth Diode. | Fairchild Semiconductor |
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