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What is FDS8842NZ?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel MOSFET".


FDS8842NZ Datasheet PDF - Fairchild Semiconductor

Part Number FDS8842NZ
Description N-Channel MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FDS8842NZ
N-Channel PowerTrench® MOSFET
February 2009
40 V, 14.9 A, 7.0 m
Features
General Description
„ Max rDS(on) = 7.0 mat VGS = 10 V, ID = 14.9 A
„ Max rDS(on) = 11.6 mat VGS = 4.5 V, ID = 11.6 A
„ HBM ESD protection level of 4.4 kV typical(note 3)
„ High performance trench technology for extremely low rDS(on)
and fast switching
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
The FDS8842NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
„ Synchronous Buck for Notebook Vcore and Server
„ Notebook Battery
„ Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D
D
D
D
G
S
S
S
www.DataSheet4U.com
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 1b)
Ratings
40
±20
14.9
93
253
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8842NZ
Device
FDS8842NZ
Package
SO8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
1
www.fairchildsemi.com

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FDS8842NZ equivalent
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0005
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
100
1000
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
5
www.fairchildsemi.com


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Part Details

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Featured Datasheets

Part NumberDescriptionManufacturers
FDS8842NZThe function is N-Channel MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

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