FDP8447L Datasheet PDF - Fairchild Semiconductor
Part Number | FDP8447L | |
Description | N-Channel MOSFET | |
Manufacturers | Fairchild Semiconductor | |
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FDP8447L
N-Channel PowerTrench® MOSFET
40V, 50A, 8.7mΩ
May 2007
tm
Features
General Description
Max rDS(on) = 8.7mΩ at VGS = 10V, ID = 14A
Max rDS(on) = 11.2mΩ at VGS = 4.5V, ID = 11A
Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench technology to deliver
low rDS(on) and optimized BVDSS capability to offer superior
performance benefit in the application.
RoHS Compliant
Applications
Inverter
Power Supplies
D
GD
S
TO-220
FDP Series
G
S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TC =
25°C
unless
otherwise
noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25°C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25°C
TA = 25°C
-Pulsed
EAS
PD
TJ, TSTG
Drain-Source Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1)
(Note 3)
(Note 1)
Ratings
40
±20
50
65
12
100
153
60
2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
2.1
62.5
°C/W
Device Marking
FDP8447L
Device
FDP8447L
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50units
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
1
www.fairchildsemi.com
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![]() ![]() Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1 D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
0.05
10-4
SINGLE PULSE
RθJC = 2.1oC/W
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
100
Figure 13. Transient Thermal Response Curve
101
www.DataSheet4U.com
©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
5
www.fairchildsemi.com
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Information | Total 6 Pages | |
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