K3435 Datasheet PDF - NEC
|Description||MOSFET ( Transistor ) - 2SK3435|
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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The 2SK3435 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
• Super low on-state resistance:
RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A)
5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A)
5 • Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
5 Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) PT 1.5
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg –55 to +150
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
5 Channel to Case
Channel to Ambient
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14604EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K3435 electronic component.
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|K3430||The function is MOSFET ( Transistor ) - 2SK3430.|
|K3435||The function is MOSFET ( Transistor ) - 2SK3435.|
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