FDMS7676 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDMS7676 | |
| Description | N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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July 2009
FDMS7676
N-Channel PowerTrench® MOSFET
30 V, 5.5 m:
Features
General Description
Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
Advanced Package and Silicon design for low rDS(on) and high
efficiency
Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
28
76
16
90
72
48
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.6
50
°C/W
Device Marking
FDMS7676
Device
FDMS7676
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7676 RevA
1
www.fairchildsemi.com
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Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-4
20
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
Figure 15.
16
di/dt = 300 A/Ps
12
8
4
0
-4
0 25 50 75 100 125 150
TIMES (nS)
Figure 14. Body Diode Reverse Recovery
www.DataSheet4U.com
Characteristics
1000
FDMS7676 Rev. AD
5 www.fairchildsemi.com
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| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDMS7676.PDF Datasheet ] | |
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