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What is FDMS7672AS?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel MOSFET".


FDMS7672AS Datasheet PDF - Fairchild Semiconductor

Part Number FDMS7672AS
Description N-Channel MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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September 2009
FDMS7672AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 4 m
Features
General Description
„ Max rDS(on) = 4.0 mat VGS = 10 V, ID = 18 A
„ Max rDS(on) = 4.5 mat VGS = 7 V, ID = 16 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
The FDMS7672AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ 100% UIL tested
„ Synchronous Rectifier for DC/DC Converters
„ RoHS Compliant
„ Notebook Vcore/ GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top
Bottom
Pin 1
S D5
4G
S
SG D 6
3S
Power 56
DDDD
D7
D8
2S
1S
MOSFET
www.DataSheet4U.com
Maximum
Ratings
TA
=
25
°C
unless
otherwise
noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
dv/dt
MOSFET dv/dt
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
42
83
19
90
2.6
60
46
2.5
-55 to +150
Units
V
V
A
V/ns
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.7
50
°C/W
Device Marking
FDMS7672AS
Device
FDMS7672AS
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7672AS Rev.C
1
www.fairchildsemi.com

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FDMS7672AS equivalent
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-4
SINGLE PULSE
RθJA = 125 oC/W
10-3
10-2
10-1 1
t, RECTANGULAR PULSE DURATION (sec)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10 100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet4U.com
FDMS7672AS Rev.C
5 www.fairchildsemi.com


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Featured Datasheets

Part NumberDescriptionManufacturers
FDMS7672ASThe function is N-Channel MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

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