FDMC6679AZ Datasheet PDF - Fairchild Semiconductor
| Part Number | FDMC6679AZ | |
| Description | N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
| Logo |  |
|
|
There is a preview and FDMC6679AZ download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
Preview 1 page No Preview Available !
FDMC6679AZ
P-Channel PowerTrench® MOSFET
-30 V, -20 A, 10 mΩ
Features
Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
HBM ESD protection level of 8 kV typical(note 3)
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
July 2009
General Description
The FDMC6679AZ has been designed to minimize losses in
load switch applications. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) and ESD protection.
Applications
Load Switch in Notebook and Server
Notebook Battery Pack Power Management
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-30
±25
-20
-51
-11.5
-32
41
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC6679AZ
Device
FDMC6679AZ
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
1
www.fairchildsemi.com
|
| |
 
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
VGS = -10 V
100
10
SINGLE PULSE
1 RθJA = 125 oC/W
TA = 25 oC
0.3
10-3
10-2
10-1 1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
PDM
0.01
SINGLE PULSE
RθJA = 125 oC/W
0.001
10-3
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 1
10
t, RECTANGULAR PULSE DURATION (sec)
100
www.DataSheet4U.com
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2009 Fairchild Semiconductor Corporation
FDMC6679AZ Rev.D1
5
www.fairchildsemi.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDMC6679AZ electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDMC6679AZ.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | Manufacturers |
| FDMC6679AZ | The function is N-Channel MOSFET. | Fairchild Semiconductor |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
FDMC
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||