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What is FDG1024NZ?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel MOSFET".


FDG1024NZ Datasheet PDF - Fairchild Semiconductor

Part Number FDG1024NZ
Description N-Channel MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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August 2009
FDG1024NZ
Dual N-Channel PowerTrench® MOSFET
20 V, 1.2 A, 175 m
Features
„ Max rDS(on) = 175 mat VGS = 4.5 V, ID = 1.2 A
„ Max rDS(on) = 215 mat VGS = 2.5 V, ID = 1.0 A
„ Max rDS(on) = 270 mat VGS = 1.8 V, ID = 0.9 A
„ Max rDS(on) = 389 mat VGS = 1.5 V, ID = 0.8 A
„ HBM ESD protection level >2 kV (Note 3)
„ Very low level gate drive requirements allowing operation in
3 V circuits (VGS(th) < 1.5 V)
„ Very small package outline SC70-6
„ RoHS Compliant
General Description
This dual N-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This device
has been designed especially for low voltage applications as a
replacement for bipolar digital transistors and small signal
MOSFETs. Since bias resistors are not required, this dual digital
FET can replace several different digital transistors, with
different bias resistor values.
S2
G2
D1
D2
G1
S1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
SC70-6
www.DataShMeeOt4SU.FcoEmT Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
1.2
6
0.36
0.30
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
350
415
°C/W
Device Marking
.24
Device
FDG1024NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
1
www.fairchildsemi.com

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FDG1024NZ equivalent
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 415 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
Figure 12. Transient Thermal Response Curve
100
1000
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDG1024NZ Rev.B
5
www.fairchildsemi.com


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Part Details

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Featured Datasheets

Part NumberDescriptionManufacturers
FDG1024NZThe function is N-Channel MOSFET.Fairchild Semiconductor
Fairchild Semiconductor

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