FDU6780A Datasheet PDF - Fairchild Semiconductor
| Part Number | FDU6780A | |
| Description | N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FDU6780A download ( pdf file ) link at the bottom of this page. Total 7 Pages | ||
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FDD6780A / FDU6780A_F071
N-Channel PowerTrench® MOSFET
January 2009
25 V, 8.6 mΩ
Features
General Description
Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A
Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A
100% UIL test
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
S
D-PAK
(TO-252)
D
GG
D
S
Short-Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
30
48
16.4
100
24
32.6
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case TO-252, TO-251
Thermal Resistance, Junction to Ambient TO-252
Package Marking and Ordering Information
(Note 1a)
4.6
40
°C/W
Device Marking
FDD6780A
FDU6780A
Device
FDD6780A
FDU6780A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
1
www.fairchildsemi.com
|
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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 16.4 A
8
6
4
VDD = 10 V
VDD = 13 V
VDD = 16 V
2
0
0 3 6 9 12 15 18
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3000
1000
Ciss
Coss
100
0.1
f = 1 MHz
VGS = 0 V
Crss
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vs Drain
to Source Voltage
100 60
30
TJ = 125 oC
10
TJ = 150 oC
TJ = 25 oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
100
www.DataSheet4U.com
200
100
10 us
10
1
0.1
0.1
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 4.6 oC/W
TC = 25 oC
100 us
1 ms
10 ms
100 ms
DC
1 10
VDS, DRAIN to SOURCE VOLTAGE (V)
70
Figure 11. Forward Bias Safe
Operating Area
45
VGS = 10 V
30
Limited by Package
15
RθJC = 4.6 oC/W
VGS = 4.5 V
0
25 50 75 100 125 150
Tc, CASE TEMPERATURE (oC)
175
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
2000
1000
100
VGS = 10 V
SINGLE PULSE
RθJC = 4.6 oC/W
TC = 25 oC
10
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
Figure 12. Single Pulse Maximum
Power Dissipation
10
©2009 Fairchild Semiconductor Corporation
FDD6780A / FDU6780A_F071 Rev.C
5
www.fairchildsemi.com
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| Information | Total 7 Pages | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| FDU6780A | The function is N-Channel MOSFET. | Fairchild Semiconductor |
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