FDB3860 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDB3860 | |
| Description | N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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March 2009
FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
High performance trench technology for extremely low rDS(on)
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion
Synchronous Rectifier
DD
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
30
6.4
60
96
71
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.75
40
°C/W
Device Marking
FDB3860
Device
FDB3860
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
1
www.fairchildsemi.com
|
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Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-6
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC =1.75 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
0.1
0.01
0.001
10-4
www.DataSheet4U.com
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 62.5 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1
1000
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
5
www.fairchildsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDB3860 electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDB3860.PDF Datasheet ] | |
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