FDB029N06 Datasheet PDF - Fairchild Semiconductor
| Part Number | FDB029N06 | |
| Description | N-Channel PowerTrench MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FDB029N06 download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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June 2009
FDB029N06
N-Channel PowerTrench® MOSFET
60V, 193A, 3.1mΩ
Features
• RDS(on) = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Convertors / Synchronous Rectification
D
D
GS
D2-PAK
FDB Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
Drain to Source Voltage
www.DataVSGhSeSet4U.com Gate to Source Voltage
ID Drain Current
-Continuous (TC = 25oC, Silicon Limited)
-Continuous (TC = 100oC, Silicon Limited)
-Continuous (TC = 25oC, Package Limited)
IDM Drain Current
- Pulsed
(Note 1)
EAS Single Pulsed Avalanche Energy
(Note 2)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation
(TC = 25oC)
- Derate above 25oC
60
±20
193*
136*
120
772
1434
6
231
1.54
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.65
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2009 Fairchild Semiconductor Corporation
FDB029N06 Rev. A
1
www.fairchildsemi.com
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
www.DataSheet4U.com
Unclamped Inductive Switching Test Circuit & Waveforms
FDB029N06 Rev. A
5 www.fairchildsemi.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDB029N06 electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FDB029N06.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| FDB029N06 | The function is N-Channel PowerTrench MOSFET. | Fairchild Semiconductor |
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