FCA35N60 Datasheet PDF - Fairchild Semiconductor
|Description||600V N-Channel MOSFET|
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600V N-Channel MOSFET
• 650V @ TJ = 150°C
• Typ.RDS(on) = 0.079Ω
• Ultra low gate charge ( Typ. Qg = 139nC )
• Low effective output capacitance ( Typ. Coss.eff = 340pF )
• 100% avalanche tested
SuperFETTM is Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge bal-
ance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Drain to Source Voltage
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Case-to-Heat Sink
Thermal Resistance, Junction to Ambient
-55 to +150
©2009 Fairchild Semiconductor Corporation
FCA35N60 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA35N60 Rev. A
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|Information||Total 8 Pages|
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|Download||[ FCA35N60.PDF Datasheet ]|
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|FCA35N60||The function is 600V N-Channel MOSFET.|
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