IGW75N60T Datasheet PDF - Infineon Technologies
| Part Number | IGW75N60T | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | Infineon Technologies | |
| Logo |  |
|
|
There is a preview and IGW75N60T download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
Preview 1 page No Preview Available !
IGW75N60T
TRENCHSTOP™ Series
q
Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO247-3
Type
IGW75N60T
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
G75T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
150
75
225
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.6 20.09.2013
|
| |
 
IGW75N60T
TRENCHSTOP™ Series
q
120A
VGE=20V
15V
90A 13V
11V
9V
60A
7V
30A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
120A
VGE=20V
15V
90A 13V
11V
9V
60A
7V
30A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
1.5V
1.0V
IC=150A
IC=75A
IC=37.5A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
5
Rev. 2.6 20.09.2013
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IGW75N60T electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IGW75N60T.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | Manufacturers |
| IGW75N60H3 | The function is IGBT ( Insulated Gate Bipolar Transistor ). |  Infineon |
| IGW75N60T | The function is IGBT ( Insulated Gate Bipolar Transistor ). | Infineon Technologies |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
IGW7
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||