IGW03N120H2 Datasheet PDF - Infineon Technologies
| Part Number | IGW03N120H2 | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | Infineon Technologies | |
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IGP03N120H2
IGW03N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
• Qualified according to JEDEC2 for target applications
PG-TO220-3-1
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
IGW03N120H2
IGP03N120H2
VCE
IC
Eoff
Tj
1200V 3A 0.15mJ 150°C
1200V 3A 0.15mJ 150°C
Marking
G03H1202
G03H1202
Package
PG-TO-247-3
PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
±20
62.5
-40...+150
260
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.6 Febr. 08
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IGP03N120H2
IGW03N120H2
10A
8A
VGE=15V
12V
6A 10V
8V
6V
4A
2A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
12A
10A
8A Tj=+150°C
6A Tj=+25°C
4A
2A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
10A
9A
8A
7A VGE=15V
12V
6A 10V
5A
8V
6V
4A
3A
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
3V
I =6A
C
IC=3A
2V
IC=1.5A
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.6 Febr. 08
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IGW03N120H2 electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IGW03N120H2.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| IGW03N120H2 | The function is IGBT ( Insulated Gate Bipolar Transistor ). | Infineon Technologies |
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