DataSheet39.com

What is IGW03N120H2?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "IGBT ( Insulated Gate Bipolar Transistor )".


IGW03N120H2 Datasheet PDF - Infineon Technologies

Part Number IGW03N120H2
Description IGBT ( Insulated Gate Bipolar Transistor )
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


There is a preview and IGW03N120H2 download ( pdf file ) link at the bottom of this page.





Total 13 Pages



Preview 1 page

No Preview Available ! IGW03N120H2 datasheet, circuit

IGP03N120H2
IGW03N120H2
HighSpeed 2-Technology
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
Qualified according to JEDEC2 for target applications
PG-TO220-3-1
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
IGW03N120H2
IGP03N120H2
VCE
IC
Eoff
Tj
1200V 3A 0.15mJ 150°C
1200V 3A 0.15mJ 150°C
Marking
G03H1202
G03H1202
Package
PG-TO-247-3
PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
±20
62.5
-40...+150
260
Unit
V
A
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.6 Febr. 08

line_dark_gray
IGW03N120H2 equivalent
IGP03N120H2
IGW03N120H2
10A
8A
VGE=15V
12V
6A 10V
8V
6V
4A
2A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
12A
10A
8A Tj=+150°C
6A Tj=+25°C
4A
2A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
10A
9A
8A
7A VGE=15V
12V
6A 10V
5A
8V
6V
4A
3A
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
3V
I =6A
C
IC=3A
2V
IC=1.5A
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.6 Febr. 08


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IGW03N120H2 electronic component.


Information Total 13 Pages
Link URL [ Copy URL to Clipboard ]
Download [ IGW03N120H2.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
IGW03N120H2The function is IGBT ( Insulated Gate Bipolar Transistor ). Infineon TechnologiesInfineon Technologies

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

IGW0     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search