WV3EG232M64STSU-D4 Datasheet PDF - White Electronic Designs
| Part Number | WV3EG232M64STSU-D4 | |
| Description | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED | |
| Manufacturers | White Electronic Designs | |
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White Electronic Designs WV3EG232M64STSU-D4
PRELIMINARY*
512MB – 2x32Mx64 DDR SDRAM UNBUFFERED
FEATURES
PC2700 @ CL2.5
Double-data-rate architecture
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Auto and self refresh, (8K/64ms refresh)
Serial presence detect with EEPROM
Power supply: VCC/VCCQ: 2.5V ± 0.20V
Dual Rank
Standard 200 pin SO-DIMM package
• Package height options
D4: 31.75mm (1.25")
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial Temperature option
DESCRIPTION
The WV3EG232M64STSU is a 2x32Mx64 Double Data
Rate SDRAM memory module based on 512Mb DDR
SDRAM component. The module consists of eight 32Mx16
DDR SDRAMs in 66 pin TSOP packages mounted on a
200 pin FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data 1/0 transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
www.DataSheet4U.com
OPERATING FREQUENCIES
Clock Speed
CL-tRCD-tRP
DDR333@CL=2.5
166MHz
2.5-3-3
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2005
Rev. 1
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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White Electronic Designs WV3EG232M64STSU-D4
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VCC and VCCQ supply relative to VSS
Storage temperature
Operating temperature
Power Dissipation
Short circuit output current
Symbol
VIN, VOUT
VCC, VCCQ
TSTG
TA
PD
IOS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Value
-0.5 ~ 3.6
-0.5 ~ 3.6
-55 ~ +150
0 ~ 70
8
50
Units
V
V
°C
°C
W
mA
DC CHARACTERISTICS
-40°C ≤ TA ≤ 85°C
Parameter
Supply voltage DDR266/DDR333 (nominal VCC of 2.5V)
I/O Supply voltage DDR266/DDR333 (nominal VCC of 2.5V)
I/O Reference voltage
I/O Termination voltage
Input logic high voltage
Input logic low voltage
Input voltage level, CK and CK#
Input differential voltage, CK and CK#
Input crossing point voltage, CK and CK#
Input leakage current
Output leakage current
wOwutwpu.Dt haigtahScuhrereentt4(Uno.rcmoaml strengh); VOUT = V +0.84V
Output high current (normal strengh); VOUT = VTT -0.84V
Output high current (half strengh); VOUT = VTT +0.45V
Output high current (half strengh); VOUT = VTT -0.45V
Addr, CAS#,
RAS#, WE#
CS#, CKE
CK, CK#
DM
Symbol
VCC
VCCQ
VREF
VTT
VIH(DC)
VIL(DC)
VIN(DC)
VID(DC)
VIX(DC)
II
IOZ
IOH
IOL
IOH
IOL
Min
2.3
2.3
0.49*VCCQ
VREF-0.04
VREF+0.15
-0.3
-0.3
0.3
0.3
-16
Max
2.7
2.7
0.51*VCCQ
VREF+0.04
VCCQ+0.30
VREF-0.15
VCCQ+0.30
VCCQ+0.60
VCCQ+0.60
16
-8 8
-8 8
-4 4
-10 10
-16.8 —
16.8 —
-9 —
9—
Unit
V
V
V
V
V
V
V
V
uA
uA
uA
uA
uA
mA
mA
mA
mA
Note
1
2
3
Based on SAMSUNG components.
NOTES:
1. VREF is expected to be equal to 0.5*VCCQ of the transmitting device, and to track variations in the DC level of the same. Peak to peak noise on VREF may not exceed ±2% of the DC
value
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors,is expected to be set equal to VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK#.
CAPACITANCE
TA = 25°C, f = 100MHz
Parameter
Input Capacitance (A0-A12, BA0-BA1, RAS#, CAS#, WE#)
Input Capacitance (CKE0, CKE1)
Input Capacitance (CS0#, CS1#)
Input Capacitance (CK0, CK0#, CK1, CK1#)
Input Capacitance (DM0-DM7), (DQS0-DQS7)
Input Capacitance (DQ0-DQ63)
Symbol
Min
Max
Unit
CIN1 20 28 pF
CIN2 12 16 pF
CIN3 12 16 pF
CIN4 12 16 pF
CIN5 12 14 pF
COUT1
12
14
pF
Based on SAMSUNG components.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
September 2005
Rev. 1
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for WV3EG232M64STSU-D4 electronic component. |
| Information | Total 14 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ WV3EG232M64STSU-D4.PDF Datasheet ] | |
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