2SC1971 Datasheet PDF - Inchange Semiconductor
Part Number | 2SC1971 | |
Description | Silicon NPN Power Transistor | |
Manufacturers | Inchange Semiconductor | |
Logo | ||
There is a preview and 2SC1971 download ( pdf file ) link at the bottom of this page. Total 2 Pages |
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isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
DESCRIPTION
·High Power Gain-
: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage RBE= ∞
wwwEmitter-Base Voltage
VALUE UNIT
35 V
17 V
4V
IC Collector Current
2A
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
12.5
W
1.5
Tj Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
isc Website:www.iscsemi.cn
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC1971 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. RF Power Amplifier - Mitsubishi [ Learn More ] | |
Download | [ 2SC1971.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
2SC1970 | The function is NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications). Mitsubishi Electric Semiconductor | |
2SC1970 | The function is Silicon NPN Power Transistor. Inchange Semiconductor | |
2SC1971 | The function is NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications). Mitsubishi Electric Semiconductor | |
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