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What is 2SC1971?

This electronic component, produced by the manufacturer "Inchange Semiconductor", performs the same function as "Silicon NPN Power Transistor".


2SC1971 Datasheet PDF - Inchange Semiconductor

Part Number 2SC1971
Description Silicon NPN Power Transistor
Manufacturers Inchange Semiconductor 
Logo Inchange Semiconductor Logo 


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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
DESCRIPTION
·High Power Gain-
: Gpe10dB,f= 175MHz, PO= 6W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage RBE=
wwwEmitter-Base Voltage
VALUE UNIT
35 V
17 V
4V
IC Collector Current
2A
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
12.5
W
1.5
Tj Junction Temperature
150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 83 /W
Rth j-c Thermal Resistance,Junction to Case
10 /W
isc Websitewww.iscsemi.cn


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC1971 electronic component.


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2SC1971 datasheet RF Power Amplifier


1. RF Power Amplifier - Mitsubishi

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Featured Datasheets

Part NumberDescriptionMFRS
2SC1970The function is NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications). Mitsubishi Electric SemiconductorMitsubishi Electric Semiconductor
2SC1970The function is Silicon NPN Power Transistor. Inchange SemiconductorInchange Semiconductor
2SC1971The function is NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications). Mitsubishi Electric SemiconductorMitsubishi Electric Semiconductor

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