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PDF FTP18N06 Data sheet ( Hoja de datos )
| Número de pieza | FTP18N06 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
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1. FTP18N06 pdf datasheet pinout  Hay una vista previa y un enlace de descarga de FTP18N06 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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FTP18N06
N-Channel MOSFET
Applications:
• DC Motor Control
• UPS
• Class D Amplifier
Pb Lead Free Package and Finish
VDSS
60V
RDS(ON) (Max.)
18 mΩ
ID
59 A
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
PACKAGE
FTP18N06
TO-220
BRAND
FTP18N06
D
G DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings Tc=25 oC unless otherwise specified
Symbol
Parameter
Maximum
Units
VDSS
ID
ID@ 100 oC
IDM
PD
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
(NOTE *1)
Continuous Drain Current
.
Continuous Drain Current
Pulsed DrainCurrent, VGS@ 10V
Power Dissipation
(NOTE *2)
Derating Factor above 25 oC
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=500 µH, ID=21.5A
Pulsed Avalanche Engergy
Peak Diode Recovery dv/dt
(NOTE *3)
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
60
59
Figure 3
Figure 6
150
1.0
±20
115
Figure 8
3.0
300
260
-55 to 175
V
A
W
W/ oC
V
mJ
V/ ns
oC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Min. Typ. Max.
-- -- 1.0
-- -- 62
Units
oC/W
Test Conditions
Wa pateearkcjouonlcetdiohneatetsminpke,raPtDuraedojufs+te1d75fooCr
1 cubic foot chamber, free air
©2006 InPower Semiconductor Co., Ltd.
FTP18N06 REV. B Oct. 2006
1 page  
www.DataSheet4U.com
10000
1000
100
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0----–-----T---C---
125
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
40 PULSE DURATION = 250 µs
35 DUTY FACTOR = 0.5% MAX
VDS = 10 V
30
25
20
15 +175 oC
10 +25oC
5 -55oC
0
1.5
2.0
2.5 3.0
3.5
VGS, Gate-to-Source Voltage (V)
4.0
1000
10
Figure8. Unclamped Inductive
Switching Capability
If R≠ 0: tAV= (L/R) ln[(IAS×R)/(1.3BVDSS-VDD)+1]
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
R equals total Series resistance of Drain circuit
10 STARTING TJ = 150 oC
STARTING TJ = 25 oC
1
1E-6
10E-6 100E-6 1E-3 10E-3
tAV, Time in Avalanche (s)
100E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
50
PULSE DURATION = 10 µs
DUTY FACTOR = 0.5% MAX
TC=25°C
40
30
20
10
0
VGS=10V
50 100 150 200
ID, Drain Current (A)
250
©2006 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.5
2.0
1.5
1.0
PULSE DURATION = 250 µs
DUTY FACTOR = 0.5% MAX
VGS = 10V, ID = 15A
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
FTP18N06 REV. B Oct. 2006
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FTP18N06.PDF ] | |
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