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PDF EIC0910-2 Data sheet ( Hoja de datos )
| Número de pieza | EIC0910-2 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
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Hay una vista previa y un enlace de descarga de EIC0910-2 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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UPDATED 08/21/2007
EIC0910-2
9.50-10.50GHz 2-Watt Internally-Matched Power FET
FEATURES
• 9.50 –10.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +33.5 dBm Output Power at 1dB Compression
• 8.0 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• -46 dBc IM3 at Po = 22.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 550mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ ≈ 550mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 550mA
f = 9.50-10.50GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 9.50-10.50GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 10.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 10 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
32.5
7.0
-43
TYP
33.5
8.0
30
600
-46
1000
-2.5
11
MAX
±0.6
700
UNITS
dBm
dB
dB
%
mA
dBc
1250
-4.0
12
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
24mA
Igr Reverse Gate Current
-4.8mA
Pin Input Power 33.0dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
7.2mA
-1.2mA
@ 3dB Compression
175C
-65C to +175C
12.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EIC0910-2.PDF ] | |
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