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Datasheet 50N035 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 50N035 | N-Channel Field Effect Transistor
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
50N035
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automoti |  Bay Linear | transistor |
50N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 50N02-09 | SUB50N02-09 SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V
ID (A)a
20 15
D D D D
TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested
APPLICATIONS
D High-  Vishay Siliconix data | | |
| 2 | 50N024 | SUD50N024
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
AP Vishay Siliconix data | | |
| 3 | 50N02409PU54A | SU50N02409PU54A
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for  Vishay Intertechnology data | | |
| 4 | 50N025-05P | SUD50N025-05P New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
ID (A)a, e
89 80
Qg (Typ)
30 nC
TO-252
FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant
APPLICATIONS D DC/DC Conversion Vishay Siliconix data | | |
| 5 | 50N03 | Power Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) �  Tuofeng transistor | | |
| 6 | 50N03 | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
50 Amps, 30 Volts N-CHANNEL MOSFET
1.Features
Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current
2.Applications
VDSS=30V,RDS(on)=6.5mΩ,ID=50A Vds=30V RDS(ON)=6.5mΩ(M  KIA mosfet | | |
| 7 | 50N035 | N-Channel Field Effect Transistor
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
50N035
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automoti Bay Linear transistor | |
| Esta página es del resultado de búsqueda del 50N035. Si pulsa el resultado de búsqueda de 50N035 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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