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PDF IRLB8721PBF Data sheet ( Hoja de datos )
| Número de pieza | IRLB8721PBF | |
| Descripción | 30V Single N-Channel HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97390
IRLB8721PbF
Applications
l Optimized for UPS/Inverter Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg (typ.)
:30V 8.7m @VGS = 10V 7.6nC
D
G
Gate
DS
G
TO-220AB
IRLB8721PbF
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
30
± 20
62
44
250
65
33
0.43
-55 to + 175
300 (1.6mm from case)
x x10lb in (1.1N m)
Units
V
A
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
gJunction-to-Case
Case-to-Sink, Flat Greased Surface
fJunction-to-Ambient
Typ.
–––
0.5
–––
Max.
2.3
–––
62
Units
°C/W
Notes through
are on page 9
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1
4/22/09
1 page  
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IRLB8721PbF
80 2.5
ID = 1.0mA
ID = 250μA
60 2.0 ID = 25μA
40 1.5
20 1.0
0
25
50 75 100 125 150
TC , CaseTemperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τC
Ri (°C/W)
0.003454
τι (sec)
13.68748
τ3 τ4 τ 0.17246 7.21E-05
τ3 τ4 0.786312 0.001227
1.368218 0.007178
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLB8721PBF.PDF ] | |
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