DB-55015-490 Datasheet PDF - ST Microelectronics
| Part Number | DB-55015-490 | |
| Description | RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs | |
| Manufacturers | ST Microelectronics | |
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DB-55015-490
RF power amplifier using 1 x PD55015-E
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Frequency: 420 - 490 MHz
■ Supply voltage: 13.2 V
■ Output power: 15 W
■ Power gain: 13.5 ± 0.7 dB
■ Efficiency: 51 % - 62 %
■ Load mismatch: 20:1
■ Beo free amplifier
Description
The DB-55015-490 is a common source
N-channel enhancement-mode lateral field effect
RF power amplifier designed for UHF mobile radio
applications.
Mechanical specification:
L = 60 mm, W = 30 mm
Table 1.
Device summary
Order codes
DB-55015-490
March 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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DB-55015-490
4 Typical performance
Typical performance
www.datashFeiegt4uur.eco2m. Gain vs output power
Vdd = 13.2 V, Idq = 150 mA
Figure 3. Efficiency vs output
power_Vdd = 13.2 V, Idq = 150 mA
-(Z
-(Z
-(Z
-(Z
-(Z
/UTPUT POWER 7
!-V
-(Z
-(Z
-(Z
-(Z
-(Z
/UTPUT POWER 7
!-V
Figure 4.
Output power and efficiency vs
frequency_Vdd = 13.2 V,
Idq = 150 mA, Pin = 29 dBm
Figure 5. Gain vs frequency_Vdd = 13.2 V,
Idq = 150mA, Pin = 29 dBm
0OUT 7
%FFICIENCY
&REQUENCY -(Z
!-V
&REQUENCY -(Z
!-V
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DB-55015-490 electronic component. |
| Information | Total 14 Pages | |
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| Download | [ DB-55015-490.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| DB-55015-490 | The function is RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs. ST Microelectronics | |
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