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Datasheet DB-54003-470 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | DB-54003-470 | RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs
DB-54003-470
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs
General feature
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 400 - 470MHz Supply voltage: 7.5V Output power: 3W Efficiency: 50% - 53% Load mismatch: 20:1 Beo free | STMicroelectronics | amplifier |
2 | DB-54003-470 | HF to 2000 MHz Class AB Common Source LDMOS in plastic packages
HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications
Part number PD54003 PD54008 PD55003 PD55008 PD55015 Freq. [MHz] 500 500 500 500 500 900 500 900 500 960 945 945 945 945 945 Pout [W] 3 8 3 8 15 15 25 25 35 2 6 18 30 6 | ETC | data |
DB- Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | DB-2933-54 | RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs
DB-2933-54
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs
General feature
■ ■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 1.6 - 54MHz Supply voltage: 48V Output power: 400W typ. Input power 10W max. Efficiency: 57% - 76% IM STMicroelectronics amplifier | | |
2 | DB-3 | Silicon Bidirectional DIAC Semtech Corporation data | | |
3 | DB-4 | Bi-directional trigger diodes LESHAN RADIO COMPANY, LTD.
Bi-directional trigger diodes
. 500mW DO-35 . Glass silicon . We declare that the material of product compliance with RoHS requirements.
DB-4
Product Characteristic
± ∆V
∆I = IBO toIF=10mA
1.5
µS
Limiting Values
1/3
LESHAN RADIO COMPANY, Leshan Radio Company diode | | |
4 | DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor
DB-499D-470
RF power amplifier using 1 x START499D NPN RF silicon transistor
Preliminary Data
Features
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 430 - 470 MHz Supply voltage: 3.6 V Output power: 29 dBm Power gain: 19 dB Efficiency: 52 % BeO free amplif ST Microelectronics transistor | | |
5 | DB-54003-470 | RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs
DB-54003-470
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs
General feature
■ ■ ■ ■ ■ ■ ■
Excellent thermal stability Frequency: 400 - 470MHz Supply voltage: 7.5V Output power: 3W Efficiency: 50% - 53% Load mismatch: 20:1 Beo free STMicroelectronics amplifier | | |
6 | DB-54003-470 | HF to 2000 MHz Class AB Common Source LDMOS in plastic packages
HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications
Part number PD54003 PD54008 PD55003 PD55008 PD55015 Freq. [MHz] 500 500 500 500 500 900 500 900 500 960 945 945 945 945 945 Pout [W] 3 8 3 8 15 15 25 25 35 2 6 18 30 6 ETC data | | |
7 | DB-54003L-175 | HF to 2000 MHz Class AB Common Source LDMOS in plastic packages
HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications
Part number PD54003 PD54008 PD55003 PD55008 PD55015 Freq. [MHz] 500 500 500 500 500 900 500 900 500 960 945 945 945 945 945 Pout [W] 3 8 3 8 15 15 25 25 35 2 6 18 30 6 ETC data | |
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Número de pieza | Descripción | Fabricantes | |
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