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PDF IRLBL1304 Data sheet ( Hoja de datos )
| Número de pieza | IRLBL1304 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l >1mm lower profile than D2Pak
l Same footprint as D2pak
l Logic Level Gate
l Surface mount
l Ultra Low On-Resistance
l Fully Avalanche Rated
l 50% greater current in typ. application
condition vs. D2Pak
G
PD- 91843A
IRLBL1304
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.0045Ω
ID = 185A
S
Description
The HEXFET® MOSFET is the most popular power MOSFET in the world.
This particular HEXFET® MOSFET is in the SuperD2PakTM and has the same
outline and pinout as the standard D2Pak but has increased current handling
capability and >1mm lower profile. This makes it ideal to reduce component
count in multiparallel D2Pak operation, reduce system power dissipation or
upgrade existing design.
This package has also been designed to meet automotive qualification
standard Q101 and can be used with normal surface mouting equipment
and has the same temperature profile and recommendations as the
commonly used D2Pak.
Super-D2PakTM
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
* Current capability in normal application, see Fig.9.
www.irf.com
Max.
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
260 (1.6mm from case )
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
W
1
2/16/00
1 page  
www.datasheet4u.com
200
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRLBL1304
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLBL1304.PDF ] | |
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