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PDF APTGT300A60G Data sheet ( Hoja de datos )

Número de pieza APTGT300A60G
Descripción IGBT Power Module
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! APTGT300A60G Hoja de datos, Descripción, Manual

APTGT300A60G
Phase leg
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VCES = 600V
IC = 300A @ Tc = 80°C
VB US
Q1
G1
E1 OUT
Q2
G2
E2
0/VB US
G1 VBUS
E1
E2
G2
0/VBUS
OUT
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
430
300
500
±20
1150
600A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APT website – http://www.advancedpower.com
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APTGT300A60G pdf
APTGT300A60G
www.datasheet4u.com
Operating Frequency vs Collector Current
120
VCE=300V
100 D=50%
ZCS ZVS
80
RG=1.8
TJ =150°C
Tc=85°C
60
40
20 Hard
switching
0
0 100 200 300 400 500
IC (A)
Forward Characteristic of diode
600
500
400
300
200
100
0
0
TJ=125°C
TJ=150°C
TJ =25°C
0.4 0.8 1.2 1.6
VF (V)
2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
Diode
0.2 0.9
0.15
0.7
0.5
0.1
0.3
0.05 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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