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PDF APTGT225A170G Data sheet ( Hoja de datos )
| Número de pieza | APTGT225A170G | |
| Descripción | Phase leg Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT225A170G
Phase leg
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
VB US
Q1
G1
E1 OUT
Q2
G2
E2
0/VB US
G1 VBUS
E1
E2
G2
0/VBUS
OUT
VCES = 1700V
IC = 225A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
340
225
450
±20
1250
450A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT225A170G
www.datasheet4u.com
Operating Frequency vs Collector Current
20
15 ZCS
ZVS
10
VCE=900V
D=50%
RG= 3. 3Ω
TJ=125°C
TC=75°C
5 hard
switching
0
0 60 120 180 240 300 360
IC (A)
450
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ =25°C
TJ =125°C
TJ=125°C
0.5 1 1.5 2 2.5
VF (V)
3
0.2
0.9
0.16
0.7
0.12
0.5
0.08
0.3
0.04 0.1
0 0.05
0.00001
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT225A170G.PDF ] | |
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