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PDF APTGT200DU60TG Data sheet ( Hoja de datos )
| Número de pieza | APTGT200DU60TG | |
| Descripción | Dual common source Trench Field Stop IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT200DU60TG
Dual common source
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
G1
E1
NTC1
C1
Q1
C2
Q2
E
G2
E2
NTC2
VCES = 600V
IC = 200A @ Tc = 80°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
G2
E2
C1 E
C2
C2
E1 E2 NTC2
G1 G2 NTC1
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
290
200
400
±20
625
400A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
APTGT200DU60TG
www.datasheet4u.com
Operating Frequency vs Collector Current
120
100 ZVS
ZCS
80
VCE= 300V
D=50%
RG=2Ω
TJ =150°C
Tc=85°C
60
40
20
Hard
switching
0
0 50 100 150 200 250
IC (A)
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
TJ =125°C
TJ=150°C
TJ =25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4 0.9
Diode
0.35
0.3 0.7
0.25 0.5
0.2
0.15 0.3
0.1 0.1
0.05 0.05
0
Single Pulse
0.00001
0.0001
0. 001
0.01
0.1
1
Rectangular Pulse Duration in Seconds
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGT200DU60TG.PDF ] | |
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