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Datasheet 2SD882 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD882 | NPN Silicon Power Transistor SMD Type
NPN Silicon Power Transistor 2SD882
Transistors
Features
Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
Absolute Maximum Ratings Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current to Continuous C |  Kexin | transistor |
| 2 | 2SD882 | NPN SILICON POWER TRANSISTOR DATA SHEET
NPN SILICON POWER TRANSISTOR
2SD882
NPN SILICON POWER TRANSISTOR
DESCRIPTION
The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.
FEATURES
• Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = |  NEC | transistor |
| 3 | 2SD882 | NPN MEDIUM POWER TRANSISTOR 2SD882
NPN medium power transistor
Features
■ High current ■ Low saturation voltage ■ Complement to 2SB772
Applications
■ Voltage regulation ■ Relay driver ■ Generic switch ■ Audio power amplifier ■ DC-DC converter
Description
The device is a NPN transistor manufactured by using pla |  ST Microelectronics | transistor |
| 4 | 2SD882 | PNP/NPN Epitaxial Planar Transistors PNP / NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
22SSDB787822
TO-126
1.EMITTER 2.COLLECTOR 3.BASE
1 2 3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse)(1) Base Current Total Cev |  Weitron Technology | transistor |
| 5 | 2SD882 | MEDIUM POWER LOW VOLTAGE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD882
MEDIUM POWER LOW VOLTAGE TRANSISTOR
1 TO-126
NPN SILICON TRANSISTOR
FEATURES
* High current output up to 3A * Low saturation voltage * Complement to 2SB772
1 TO-126C
APPLICATIONS
* Audio power amplifier * DC-DC convertor * Voltage regulator
1 TO-92NL
1 TO- |  Unisonic Technologies | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V  Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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