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Número de pieza | K2642-01MR | |
Descripción | MOSFET ( Transistor ) - 2SK2642-01MR | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K2642-01MR (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2SK2642-01MR
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
www.dataNshoeeste4cu.oconmdary breakdown
Low driving power
High voltage
VGS=±35V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
TO-220F15
2.54
3. Source
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
Tch
Tstg
Rating
500
±15
±60
±35
88.7
50
+150
-55 to +150
Unit
V
A
A
V
mJ
W
°C
°C
*1 L=0.72mH, Vcc=50V
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=500V
VGS=0V
VGS=±35V VDS=0V
ID=7.5A VGS=10V
ID=7.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=15A
VGS=10V
RGS=10 Ω
Tch=25°C
Tch=125°C
L=100µH Tch=25°C
IF=2xID VGS=0V Tch=25°C
IF=ID VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
500 V
3.5 4.0
4.5 V
10 500
µA
0.2 1.0 mA
10 100
nA
0.44 0.55 Ω
4.5 9.0
S
1400 2100
250 380
pF
110 170
30 50
110 170
90 140
55 90
ns
15 A
1.1 1.65 V
500 ns
8.0 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.50 °C/W
62.5 °C/W
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet K2642-01MR.PDF ] |
Número de pieza | Descripción | Fabricantes |
K2642-01MR | MOSFET ( Transistor ) - 2SK2642-01MR | Fuji Electric |
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