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K3713 Datasheet PDF - NEC

Part Number K3713
Description 2SK3713
Manufacturers NEC 
Logo NEC Logo 

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3713
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3713 is N-channel MOS Field Effect Transistor
designed for high voltage and high speed switching
applications.
ORDERING INFORMATION
PART NUMBER
2SK3713-SK
PACKAGE
TO-262
FEATURES
Super high VGS(off): VGS(off) = 3.8 to 5.8 V
Low Crss: Crss = 6.5 pF TYP.
Low QG: QG = 25 nC TYP.
Low on-state resistance:
RDS(on) = 0.83 MAX. (VGS = 10 V, ID = 5 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
ID(DC)
Drain Current (pulse) Note1
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Single Avalanche Current Note2
IAS
Single Avalanche Energy Note2
EAS
600
±30
±10
±35
100
1.5
150
55 to +150
10
6
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 100 V, L = 100 µH, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16588EJ1V0DS00 (1st edition)
Date Published September 2003 NS CP(K)
Printed in Japan
2003

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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.8
1.6
VGS = 10 V
Pulsed
1.4
1.2
ID = 5.0 A
1
0.8
0.6
0.4
0.2
0
-25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
VDD = 150 V
VGS = 10 V
RG = 10
100
td(off)
td(on)
tf
10 tr
1
0.1 1 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
VGS = 10 V
1
0V
0.1
0.01
0
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK3713
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
100
Ciss
Coss
10
VGS = 0 V
f = 1 MHz
1
0.1 1
Crss
10 100 1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500 15
VDD = 450 V ID = 10 A
400
300 V
150 V
12
300 9
VGS
200 6
VDS
100 3
00
0 4 8 12 16 20 24
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
VGS = 0 V
di/dt = 100 A/µ s
100
10
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet D16588EJ1V0DS
5


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