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What is 5N80?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as " FKPF5N80".


5N80 Datasheet PDF - Fairchild Semiconductor

Part Number 5N80
Description FKPF5N80
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FKPF5N80
Application Explanation
• Switching mode power supply, light dimmer, electric flasher unit
• TV sets, stereo, refrigerator, washing machine, bread maker
• Electric blanket, solenoid driver, small motor control
• Photo copier, electric tool
123
TO-220F
2
1: T1
2: T2
3: Gate
3
1
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage (Note1 )
Rating
800
Units
V
Symbol
Parameter
IT (RMS) RMS On-State Current
ITSM
Surge On-State Current
I2t I2t for Fusing
di/dt
PGM
PG (AV)
VGM
IGM
TJ
TSTG
Viso
Critical Rate of Rise of On-State Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature
Isolation Voltage
Conditions
Commercial frequency, sine full wave 360°
conduction, TC=104°C
Sinewave 1 full cycle, peak value, 50Hz
non-repetitive
60Hz
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=10ms
IG = 2x IGT, tr 100ns
Ta=25°C, AC 1 minute, T1 T2 G terminal to
case
Rating
5
Units
A
50
55
12.5
A
A
A2s
50
5
0.5
10
2
- 40 ~ 125
- 40 ~ 125
1500
A/µs
W
W
V
A
°C
°C
V
Thermal Characteristic
Symbol
Parameter
Rth(J-C) Thermal Resistance
Test Condition
Junction to case (Note 4)
Min.
-
Typ.
-
Max. Units
3.9 °C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004

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5N80 equivalent
www.DataTSyhepet4iUc.acolmCurves (Continues)
160
140
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE [oC]
Figure 13. Breakover Voltage vs.
Junction Temperature
160
140 TYPICAL EXAMPLE
Tj=125oC
120
100
80
60 QUADRANT
QUADRANT
40
20
0
101 102 103 104
RATE OF RISE OF OFF-STATE VOLTAGE [V/µs]
Figure 15. Breakover Voltage vs.
Rate of Rise of Off-State Voltage
1000
I
100
I
I
10
1 10 100
GATE CURRENT PULSE WIDTH [µs]
Figure 14. Gate Trigger Current vs.
Gate Current Pulse Width
TYPICAL
100
EXAMPLE
TIτTj===41A2550o0Cus
QUADRANT
VF=D=32H0z0V
10
1
QUADRANT
1 10 100
RATE OF DECAY OF ON-STATE
COMMUTATION CURRENT [A/ms]
Figure 16. Commutation Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004


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