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PDF AOU412 Data sheet ( Hoja de datos )
| Número de pieza | AOU412 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOU412
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU412 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOU412 is Pb-free (meets ROHS
& Sony 259 specifications). AOU412L is a Green
Product ordering option. AOU412 and AOU412L are
electrically identical.
TO-251
Top View
Drain
Connected to
Tab
G DS
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
RDS(ON) < 11mΩ (VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
TC=25°C G
TC=100°C B
VGS
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
65
200
30
120
100
50
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
105
1
Max
125
1.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOU412
TwYwPw.IDCaAtaLShEeLeEt4CU.TcRomICAL AND THERMAL CHARACTERISTICS
120 120
TA=25°C
100 100
80 80
60
40
tA
=
L⋅ ID
BV − VDD
60
40
20 20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOU412.PDF ] | |
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