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PDF K3462 Data sheet ( Hoja de datos )
| Número de pieza | K3462 | |
| Descripción | MOSFET ( Transistor ) - 2SK3462 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3462 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3462
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
www.DataSheet4U.com
2SK3462
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Unit: mm
• 4 V gate drive
• Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.2 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 250 V)
• Enhancement mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
250
250
±20
3
6
20
36.2
3
2
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25 °C/W
125 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 6.7 mH, IAR = 3 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1 2006-11-21
1 page  
2SK3462
www.DataSheet4U.com
10
5
3
1
Duty = 0.5
0.5
0.3 0.2
0.1
0.1
0.05 0.02
0.03 0.01
0.05
0.01
10 μ
100 μ
rth – tw
Single pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
1m
10 m
100 m
1
10
Pulse width tw (S)
Safe operating area
100
50
30
10
ID max (pulsed) *
5
3 ID max (continuous)
100 μs *
1 ms *
1 DC
0.5
0.3
0.1
* Single nonrepetitive pulse
0.05 Tc = 25°C
0.03 Curves must be derated linearly
with increase in temperature.
VDSS max
0.01
1
3 5 10
30 50 100
300 500 1000
Drain-source voltage VDS (V)
EAS – Tch
100
80
60
40
20
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 50 V, L = 6.7 mH
Waveform
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-21
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3462.PDF ] | |
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