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Número de pieza | 10N60 | |
Descripción | 600/650 Volts N-CHANNEL POWER MOSFET | |
Fabricantes | Unisonic Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 10N60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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10N60
10 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* 10A, 600V, RDS(ON) =0.73Ω@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
2.Drain
*Pb-free plating product number: 10N60L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
10N60-x-TA3-T
10N60L-x-TA3-T
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
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1 page 10N60
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TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
10V
RD
tp
L
VDS
BVDSS
IAS
VDD
D.U.T.
VDD
ID(t)
tp
VDS(t)
Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-119.A
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 10N60.PDF ] |
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