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PDF 20N60S5 Data sheet ( Hoja de datos )
| Número de pieza | 20N60S5 | |
| Descripción | SPP20N60S5 | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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 1. 600V, 20A, MOSFET - SPP20N60S5  Hay una vista previa y un enlace de descarga de 20N60S5 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPP20N60S5
VDS
RDS(on)
ID
600
0.19
20
V
Ω
A
PG-TO220
2
P-TO220-3-1
123
Type
SPP20N60S5
Package
PG-TO220
Ordering Code
Q67040-S4751
Marking
20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
20
13
40
690
1
20
±20
±30
208
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.8
Page 1
2009-12-01
1 page  
SPP20N60S5
1 Power dissipation
Ptot = f (TC)
240 SPP20N60S5
W
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
200
180 10 1
160
140
120 10 0
100
tp = 0.001 ms
tp = 0.01 ms
80
tp = 0.1 ms
tp = 1 ms
60
10 -1
DC
40
20
00 20 40 60 80 100 120 °C 160
TC
10
-2
10
0
10 1
10 2 V 10 3
VDS
3 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 0
K/W
10 -1
10 -2
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
10 -3
D = 0.01
single pulse
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
A75 20V
15V
12V
60 11V
55
50 10V
45
40
35
9V
30
25
20 8V
15
10
7V
5
00 5 10 15 20
V 30
VDS
Rev. 2.8
Page 5
2009-12-01
5 Page 
SPP20N60S5
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.8
Page 11
2009-12-01
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet 20N60S5.PDF ] | |
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