P4NK80Z Datasheet PDF - STMicroelectronics
| Part Number | P4NK80Z | |
| Description | STP4NK80Z | |
| Manufacturers | STMicroelectronics | |
| Logo |  |
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STP4NK80Z - STP4NK80ZFP
STD4NK80Z - STD4NK80Z-1
N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
General features
www.DataSheet4U.com Type
STP4NK80Z
STP4NK80ZFP
STD4NK80Z
STD4NK80Z-1
VDSS
(@Tjmax)
800 V
800 V
800 V
800 V
RDS(on)
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
ID
3A
3A
3A
3A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-220
3
2
1
TO-220FP
3
1
DPAK
IPAK
3
2
1
Internal schematic diagram
Order codes
Part number
STP4NK80Z
STP4NK80ZFP
STD4NK80ZT4
STD4NK80Z-1
Marking
P4NK80Z
P4NK80ZFP
D4NK80Z
D4NK80Z
Package
TO-220
TO-220FP
DPAK
IPAK
Packaging
Tube
Tube
Tape & reel
Tube
August 2006
Rev 8
1/18
www.st.com
18
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STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
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2 Electrical characteristics
Electrical characteristics
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(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20V
Gate threshold voltage
VDS = VGS, ID = 50µA
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
Min. Typ. Max. Unit
800 V
1 µA
50 µA
±10 µA
3 3.75 4.5
V
3 3.5 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15V, ID = 1.5A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2.9
575
67
13
S
pF
pF
pF
Cosseq(2).
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
60
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
13 ns
12 ns
35 ns
32 ns
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=640 V, ID= 3 A,
RG=4.7Ω, VGS=10V
(see Figure 16)
18 ns
7.5 ns
25 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=640V, ID = 3 A
VGS =10V
(see Figure 19)
22.5 nC
4.2 nC
11.3 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/18
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P4NK80Z electronic component. |
| Information | Total 18 Pages | |
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| Download | [ P4NK80Z.PDF Datasheet ] | |
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