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Número de pieza | 27N80 | |
Descripción | IXFK27N80 | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 27N80 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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HiPerFETwww.DataSheet4U.com TM Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
T
L
VISOL
Md
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
800 800
800 800
±20 ±20
±30 ±30
V
V
V
V
TC = 25°C, Chip capability
27N80
25N80
TC = 25°C, pulse width limited by TJM 27N80
TC = 25°C
25N80
27N80
25N80
27
25
108
100
14
13
27
25
108
100
14
13
A
A
A
A
A
A
TC= 25°C
IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
30 30 mJ
5 5 V/ns
500 520
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
- °C
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
-
-
0.9/6
-
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10 30 g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
VDS = VGS, ID = 8 mA
VGS(th) temperature coefficient
800
2
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
25N80
27N80
0.096
-0.214
V
%/K
4.5 V
%/K
±200 nA
500 µA
2 mA
0.35 Ω
0.30 Ω
VDSS
800 V
800 V
800 V
800 V
ID25
27 A
25 A
27 A
25 A
TO-264 AA (IXFK)
RDS(on)
0.30 Ω
0.35 Ω
0.30 Ω
0.35 Ω
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
95561D(6/02)
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 27N80.PDF ] |
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