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16N50C3 Datasheet PDF - Infineon Technologies

Part Number 16N50C3
Description SPP16N50C3
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 

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SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
560
0.28
16
V
A
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
2
Ultra low effective capacitances
Improved transconductance
P-TO220-3-31
3
12
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
Marking
16N50C3
16N50C3
16N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=8, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=16A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
16 161)
10 101)
48 48
460 460
0.64 0.64
16 16
±20 ±20
±30 ±30
160 34
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22

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16N50C3 equivalent
1 Power dissipation
Ptot = f (TC)
170 SPP16N50C3
W
140
120
100
80
60
40
20
00 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
SPP16N50C3
SPI16N50C3, SPA16N50C3
2 Power dissipation FullPAK
Ptot = f (TC)
36
W
28
24
20
16
12
8
4
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10 -1
tp = 1 ms
DC
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
10 -1
tp = 10 ms
DC
10
-2
10
0
10 1
10 2 V 10 3
10
-2
10
0
10 1
10 2 V 10 3
VDS
VDS
Rev. 3.2
page 5
2009-12-22


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1. 560V, MOS Transistor - Infineon

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