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PDF GWS7301E Data sheet ( Hoja de datos )
| Número de pieza | GWS7301E | |
| Descripción | Dual 20V N-Channel Power MOSFET | |
| Fabricantes | GWS | |
| Logotipo |  |
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GWS7301E
GWS7301E – Dual 20V N-Channel Power MOSFET
www.DataSheet4U.com
General Description
The GWS7301E is a dual low threshold
gate protected MOFET designed for the
small battery, cell phone, and PDA
markets. Using ultra high density MOSFET
process and space saving small outline J-
lead package, performance normally found
in a TSSOP8 footprint has been squeezed
into the footprint of a TSOP6 package.
S1
G1
G2
Features
• 6.5A, 20V rDS(ON) = 18mΩ typ. at 4.5 Volts
• 5.5A, 20V rDS(ON) = 25mΩ typ. at 2.5 Volts
• Excellent thermal characteristics.
• Rated for High Electrical Overstress Performance of 15A
short circuit and over current.
• Integrated gate diodes provide Electro-Static Discharge
(ESD) protection of 2500V HBM.
S2
TSOPJW-8 Package
N/C S2 S2 G2
8765
YWLLX
GWS7301E
*
1 234
N/C S1 S1 G1
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Drain Currenta
TA=25oC
TA=70oC
Pulsed Drain Current
Maximum Power Dissipationa
TA=25oC
TA=70oC
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ, Tstg
20
± 12
5.7 4.6
4.6 3.5
30
1.3 0.83
0.83 0.53
-55 to 150
Unit
V
A
W
oC
Thermal Resistance Ratings
Parameter
Junction-to-Ambient
Junction-to-Foot (Lead)
a Surface Mounted on FR4 Board.
SP-7301E-200-6 8/10/2006
t ≤10 sec
Steady Sate
Steady Sate
Symbol
RthJA
RthJF
Typ
81
135
70
Max
96
150
85
Unit
oC/W
1
1 page  
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Qg (nC)
GWS7301E
500
400 Ciss
300
Coss
200
Crss
VGS = 5.0V
ID = 5A
Tj = 150ºC
Tj = 25ºC
SP-7301E-200-6 8/10/2006
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GWS7301E.PDF ] | |
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