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What is K3532-01MR?

This electronic component, produced by the manufacturer "Fuji Electric", performs the same function as "MOSFET ( Transistor ) - 2SK3532-01MR".


K3532-01MR Datasheet PDF - Fuji Electric

Part Number K3532-01MR
Description MOSFET ( Transistor ) - 2SK3532-01MR
Manufacturers Fuji Electric 
Logo Fuji Electric Logo 


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2SK3532-01MR
FUJI POWER MOSFET
Super FAP-G Serieswww.DataSheet4U.com
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
900 V
Continuous drain current
VDSX *5
ID
900 V
±6 A Equivalent circuit schematic
Pulsed drain current
ID(puls]
±24 A
Gate-source voltage
Repetitive or non-repetitive
VGS
IAR
*2
±30
6
V
A
Drain(D)
Maximum Avalanche Energy
EAS
*1
244
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40
kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.16
70
kV/µs
W
Gate(G)
Source(S)
Operating and storage
temperature range
Tch
Tstg
+150
-55 to +150
°C
°C
Isolation Voltage
VISO *6
2 kVrms
*1 L=12.4mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 900V *5 VGS=-30V *6 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item
Thermal resistance
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=900V VGS=0V
VDS=720V VGS=0V
VGS=±30V VDS=0V
ID=3A VGS=10V
Tch=25°C
Tch=125°C
ID=3A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=3A
VGS=10V
RGS=10
VCC=450V
ID=6A
VGS=10V
L=12.4mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs Tch=25°C
Test Conditions
channel to case
channel to ambient
Min.
900
3.0
3.7
6
Typ.
1.92
7.4
750
100
7
21
8
42
11
21.5
3
7
0.90
1.1
5.5
Max. Units
V
5.0 V
25 µA
250
100 nA
2.50
S
1125
pF
150
11
32 ns
12
63
16.5
32 nC
4.5
10.5
A
1.50 V
µs
µC
Min. Typ.
Max. Units
1.560 °C/W
58.0 °C/W
1


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
K3532-01MRThe function is MOSFET ( Transistor ) - 2SK3532-01MR. Fuji ElectricFuji Electric

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