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PDF 2SK3775-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3775-01 | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
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2SK3775-01
FUJI POWER MOSFET
Super FAP-G Serieswww.DataSheet4U.com
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breadown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Foot Print
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
300
VDSX
300
Continuous Drain Current
ID
±32
±2.4
Pulsed Drain Current
ID(puls]
±128
Gate-Source Voltage VGS ±30
Maximum Avalanche current
IAR
32
Non-Repetitive
EAS 597.4
Maximum Avalanche Energy
Repetitive
EAR 27
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
270
2.40
Operating and Storage
Tch
+150
Temperature range
Tstg -55 to +150
Equivalent circuit schematic
D : Drain
Unit
V
Remarks
G : Gate
V VGS=-30V
A
A Ta=25°C
S1 : Source
S2 : Source
A
V
A Note *2
mJ Note *3
Note *1:Surface mounted on 1000mm2,t=1.6mm
FR-4 PCB(Drain pad area:500mm2)
Note *2:Tch =< 150°C,Repetitive and Non-repetitive
Note *3:StartingTch=25°C,IAS=13A,L=6.13mH,
mJ Note *4
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
kV/µs
kV/µs
W
°C
°C
VDS=< 300V
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *5
Note *4:Repetitive rating:Pulse width limited by
Tc=25°C
maximum channel temperature.
Ta=25°C Note*1
See to the ‘Transient Theemal impedance’
graph
Note *5:IF=< -ID, -di/dt=50A/µs,VCC=< BVDSS,Tch=< 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=16A VGS=10V
ID=16A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=180V ID=16A
VGS=10V
RGS=10 Ω
VCC=150V
ID=32A
VGS=10V
IF=32A VGS=0V Tch=25°C
IF=32A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
300 V
3.0 5.0 V
25 µA
250
100 nA
0.10 0.13 Ω
12 24
S
1970 2955
pF
335 502
20 30
29 44 ns
7.5 11
57 86
7 10.5
44.5 67.0 nC
18.0 27.0
13.5 20.5
0.90
270
3.0
1.50
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Rth(ch-a) *1
channel to ambient
*1 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2)
www.fujielectric.co.jp/fdt/scd
Min. Typ.
Max. Units
0.463 °C/W
87.0 °C/W
52.0 °C/W
1
1 page | ||
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| PDF Descargar | [ Datasheet 2SK3775-01.PDF ] | |
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