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PDF IKB03N120H2 Data sheet ( Hoja de datos )
| Número de pieza | IKB03N120H2 | |
| Descripción | HighSpeed 2-Technology | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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IKP03N120H2,
IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-247-3-1
(TO-247AC)
Type
VCE
IC
Eoff
Tj Package
Ordering Code
IKW03N120H2 1200V 3A 0.15mJ 150°C P-TO-247
Q67040-S4595
IKP03N120H2 1200V 3A 0.15mJ 150°C P-TO-220-3-1
Q67040-S4594
IKB03N120H2
1200V 3A
0.15mJ 150°C P-TO-263 (D2PAK) Q67040-S4597
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
9.6
3.9
9.9
9.9
Unit
V
A
9.6
3.9
±20 V
62.5 W
-40...+150
260
225 (for SMD)
°C
Power Semiconductors
1
Rev. 2, Mar-04
1 page  
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IKP03N120H2,
IKW03N120H2
IKB03N120H2
12A Ic
10A
8A
TC=80°C
6A
TC=110°C
4A
2A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
10A
1A
0,1A
tp= 1 µs
5 µs
1 0 µs
5 0 µs
1 0 0 µs
5 0 0 µs
DC
0,01 A 1 V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
60W
50W
40W
30W
20W
10W
0W
25°C
50°C
75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
12A
10A
8A
6A
4A
2A
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 2, Mar-04
5 Page 
www.DataSheet4U.com
IKP03N120H2,
IKW03N120H2
IKB03N120H2
16A
14A
12A T =150°C
J
10A
TJ=25°C
8A
0Ohm
100Ohm
200Ohm
300Ohm
-600A/us
-800A/us
-1000A/us
-1200A/us
-1400A/us
-1600A/us
-1800A/us
0Ohm
T =150°C
J
TJ=25°C
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
Figure 25. Typical reverse recovery
current as a function of diode current
slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
RG, GATE RESISTANCE
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
3.0V
IF=4A
4A T =150°C
J
2.5V IF=2A
IF=1A
2.0V
2A
T J= 2 5 °C
1.5V
0A
0V 1V 2V 3V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current
as a function of forward voltage
1.0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward
voltage as a function of junction
temperature
Power Semiconductors
11
Rev. 2, Mar-04
11 Page | ||
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| PDF Descargar | [ Datasheet IKB03N120H2.PDF ] | |
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