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What is K3N5V1000D-TC?

This electronic component, produced by the manufacturer "Samsung Semiconductor", performs the same function as "16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM".


K3N5V1000D-TC Datasheet PDF - Samsung Semiconductor

Part Number K3N5V1000D-TC
Description 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
Manufacturers Samsung Semiconductor 
Logo Samsung Semiconductor Logo 


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K3N5V(U)1000D-TC
CMOS MASK ROM
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM
FEATURES
Switchable organization
2,097,152 x 8(byte mode)
1,048,576 x 16(word mode)
Fast access time : 100ns(Max.)
Supply voltage : single +3.0V/ single +3.3V
Current consumption
Operating : 40mA(Max.)
Standby : 30µA(Max.)
Fully static operation
All inputs and outputs TTL compatible
www.DataSheet4U.coTmhree state outputs
Package
-. K3N5V(U)1000D-TC : 44-TSOP2-400
GENERAL DESCRIPTION
The K3N5V(U)1000D-TC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 2,097,152x8 bit(byte mode) or as
1,048,576x16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3N5V(U)1000D-TC is packaged in a 44-TSOP2.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATION
A19
.
.
.
.
.
.
.
.
A0
A-1
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
CE
OE
BHE
CONTROL
LOGIC
MEMORY CELL
MATRIX
(1,048,576x16/
2,097,152x8)
SENSE AMP.
DATA OUT
BUFFERS
...
Q0/Q8 Q7/Q15
Pin Name
A0 - A19
Q0 - Q14
Q15 /A-1
BHE
CE
OE
VCC
VSS
N.C
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power
Ground
No Connection
N.C 1
A18 2
A17 3
A7 4
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
CE 12
VSS 13
OE 14
Q0 15
Q8 16
Q1 17
Q9 18
Q2 19
Q10 20
Q3 21
Q11 22
TSOP2
44 N.C
43 A19
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BHE
32 VSS
31 Q15/A-1
30 Q7
29 Q14
28 Q6
27 Q13
26 Q5
25 Q12
24 Q4
23 VCC
K3N5V(U)1000D-TC


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K3N5V1000D-TC electronic component.


Information Total 4 Pages
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Download [ K3N5V1000D-TC.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
K3N5V1000D-TCThe function is 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM. Samsung SemiconductorSamsung Semiconductor

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